文献
J-GLOBAL ID:201702214079185479
整理番号:17A0376597
高分子キャッピング層を用いた多層MoS_2トランジスタの性能向上【Powered by NICT】
Enhanced performance of multilayer MoS2 transistor employing a polymer capping layer
著者 (4件):
Guo Junjie
(Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR China)
,
Jiang Jie
(Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR China)
,
Zheng Zhouming
(Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR China)
,
Yang Bingchu
(Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR China)
資料名:
Organic Electronics
(Organic Electronics)
巻:
40
ページ:
75-78
発行年:
2017年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)