文献
J-GLOBAL ID:201702214325613708
整理番号:17A0375098
FeドープGaN上に作製したUV検出器の性能に及ぼす透明導電性ナノ結晶酸化物薄層の影響【Powered by NICT】
The effect of transparent conductive nanocrystalline oxide thin layer on performance of UV detectors fabricated on Fe-doped GaN
著者 (6件):
Xing Z.
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China)
,
Wang R.X.
(Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China)
,
Fan Y.M.
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China)
,
Wang J.F.
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China)
,
Zhang B.S.
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China)
,
Xu K.
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
57
ページ:
132-136
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)