文献
J-GLOBAL ID:201702214423462954
整理番号:17A0475063
InGaAsのためのN型ドーピング戦略【Powered by NICT】
N-type Doping Strategies for InGaAs
著者 (8件):
Aldridge Henry
(Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA)
,
Lind Aaron G.
(Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA)
,
Bomberger Cory C.
(Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA)
,
Puzyrev Yevgeniy
(Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA)
,
Zide Joshua M.O.
(Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA)
,
Pantelides Sokrates T.
(Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA)
,
Law Mark E.
(Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA)
,
Jones Kevin S.
(Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
62
ページ:
171-179
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)