文献
J-GLOBAL ID:201702215309253118
整理番号:17A0406989
ZnFe_2O_4ベースデバイスにおける抵抗スイッチングメモリ挙動に及ぼす支援導電性フィラメントCuイオンの影響【Powered by NICT】
Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices
著者 (9件):
Sun Bai
(School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China)
,
Zhang Xin
(Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China)
,
Zhang Xin
(Institute of Fusion Science, School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China)
,
Zhou Guangdong
(Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China)
,
Zhang Chunming
(College of Electrical Engineering, Longdong University, Qingyang, Gansu 745000, China)
,
Li Pingyuan
(Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China)
,
Xia Yudong
(School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China)
,
Zhao Yong
(School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China)
,
Zhao Yong
(Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
694
ページ:
464-470
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)