文献
J-GLOBAL ID:201702215518405997
整理番号:17A1421093
無線周波数(RF)プラズマ増強化学蒸着を用いたシリコン上のゲルマニウムの低温蒸着【Powered by NICT】
Low temperature deposition of germanium on silicon using Radio Frequency Plasma Enhanced Chemical Vapor Deposition
著者 (3件):
Dushaq Ghada
(Department of Electrical Engineering and Computer Science, iMicro Center, MASDAR Institute, Building A1, PO Box 54224, Masdar City, Abu Dhabi, United Arab Emirates)
,
Rasras Mahmoud
(Department of Electrical Engineering and Computer Science, iMicro Center, MASDAR Institute, Building A1, PO Box 54224, Masdar City, Abu Dhabi, United Arab Emirates)
,
Nayfeh Ammar
(Department of Electrical Engineering and Computer Science, iMicro Center, MASDAR Institute, Building A1, PO Box 54224, Masdar City, Abu Dhabi, United Arab Emirates)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
636
ページ:
585-592
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)