文献
J-GLOBAL ID:201702215627828066
整理番号:17A1567876
ICPによるふっ素プラズマ処理を用いたエンハンスメントモードAlGaN/GaNナノワイヤチャネル高電子移動度トランジスタ【Powered by NICT】
Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP
著者 (11件):
He Yunlong
(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
,
Mi Minhan
(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
,
Wang Chong
(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
,
Zheng Xuefeng
(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
,
Zhang Meng
(School of advanced materials and nanotechnology, Xidian University, Xi’an, China)
,
Zhang Hengshuang
(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
,
Wu Ji
(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
,
Yang Ling
(School of advanced materials and nanotechnology, Xidian University, Xi’an, China)
,
Zhang Peng
(School of advanced materials and nanotechnology, Xidian University, Xi’an, China)
,
Ma Xiaohua
(School of advanced materials and nanotechnology, Xidian University, Xi’an, China)
,
Hao Yue
(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
10
ページ:
1421-1424
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)