文献
J-GLOBAL ID:201702215782870208
整理番号:17A0057877
4°軸外Si面基板上に成長させた厚い4H-SiCエピタキシャル層の形態欠陥の研究【Powered by NICT】
Study of morphology defects in 4H-SiC thick epitaxial layers grown on 4° off-axis Si-face substrates
著者 (7件):
Yan Guoguo
(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing P R China)
,
Zhang Feng
(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing P R China)
,
Liu Xingfang
(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing P R China)
,
Wang Lei
(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing P R China)
,
Zhao Wanshun
(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing P R China)
,
Sun Guosheng
(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing P R China)
,
Key Yiping Zeng
(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing P R China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
6-10
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)