文献
J-GLOBAL ID:201702215950442843
整理番号:17A0851264
p型チャネル酸化すず薄膜トランジスタに対するプラズマふっ素化の影響【Powered by NICT】
Influence of plasma fluorination on p-type channel tin-oxide thin film transistors
著者 (5件):
Chen Po-Chun
(Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan)
,
Chiu Yu-Chien
(Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)
,
Zheng Zhi-Wei
(Department of Electronic Engineering, Xiamen University, Xiamen 361005, China)
,
Cheng Chun-Hu
(Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan)
,
Wu Yung-Hsien
(Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
707
ページ:
162-166
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)