文献
J-GLOBAL ID:201702216178673065
整理番号:17A0851391
isobutylgermaneを用いたMOCVDによるGaAs(001)基板上に成長させた高効率エピタキシャルGe太陽電池【Powered by NICT】
Highly efficient epitaxial Ge solar cells grown on GaAs (001) substrates by MOCVD using isobutylgermane
著者 (9件):
Kim Youngjo
(Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea)
,
Kim Youngjo
(Korea Advanced Nano Fab Center, Suwon 16229, South Korea)
,
Kim Kangho
(Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea)
,
Kim Kangho
(Korea Advanced Nano Fab Center, Suwon 16229, South Korea)
,
Kim Chang Zoo
(Korea Advanced Nano Fab Center, Suwon 16229, South Korea)
,
Jung Sang Hyun
(Korea Advanced Nano Fab Center, Suwon 16229, South Korea)
,
Kang Ho Kwan
(Korea Advanced Nano Fab Center, Suwon 16229, South Korea)
,
Park Won-Kyu
(Korea Advanced Nano Fab Center, Suwon 16229, South Korea)
,
Lee Jaejin
(Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea)
資料名:
Solar Energy Materials and Solar Cells
(Solar Energy Materials and Solar Cells)
巻:
166
ページ:
127-131
発行年:
2017年
JST資料番号:
D0513C
ISSN:
0927-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)