文献
J-GLOBAL ID:201702216289564259
整理番号:17A0539843
ウエハースケールmultidyad封止された非常に安定した二次元材料(2DM)電界効果トランジスタ(FET)
Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation
著者 (12件):
KIM Choong-Ki
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
JEONG Eun Gyo
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
KIM Eungtaek
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
SONG Jeong-Gyu
(Samsung Advanced Inst. of Technol., Suwon, KOR)
,
KIM Youngjun
(Yonsei Univ., Seoul, KOR)
,
WOO Whang Je
(Yonsei Univ., Seoul, KOR)
,
LEE Myung Keun
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
BAE Hagyoul
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
JEON Seong-Bae
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
KIM Hyungjun
(Yonsei Univ., Seoul, KOR)
,
CHOI Kyung Cheol
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
CHOI Yang-Kyu
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
資料名:
Nanotechnology
(Nanotechnology)
巻:
28
号:
5
ページ:
055203,1-7
発行年:
2017年02月03日
JST資料番号:
W0108A
ISSN:
0957-4484
CODEN:
NNOTER
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)