文献
J-GLOBAL ID:201702216795033230
整理番号:17A0027213
BiSbTeSe2トポロジカル絶縁体ベースのスピンバルブトランジスタにおける独特な電流方向依存オン-オフ・スイッチング
Unique Current-Direction-Dependent ON-OFF Switching in BiSbTeSe2 Topological Insulator-Based Spin Valve Transistors
著者 (13件):
Zhang Minhao
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Wang Xuefeng
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Zhang Shuai
(Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Gao Yuan
(Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Yu Zhihao
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Zhang Xiaoqian
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Gao Ming
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Song Fengqi
(Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Du Jun
(Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Wang Xinran
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
He Liang
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Xu Yongbing
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Zhang Rong
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
37
号:
9
ページ:
1231-1233
発行年:
2016年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)