文献
J-GLOBAL ID:201702217035076425
整理番号:17A0474645
太陽光MCTベースn-on-p赤外FPA検出器における「漏れ」と「非漏れ」FPA要素の光応答に及ぼす高導電性n型抗脱バイアス層の影響【Powered by NICT】
Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors
著者 (7件):
Vasiliev V.V.
(Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, 13, Acad. Lavrent’ev Avenue, Novosibirsk, Russia)
,
Vishnyakov A.V.
(Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, 13, Acad. Lavrent’ev Avenue, Novosibirsk, Russia)
,
Dvoretsky S.A.
(Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, 13, Acad. Lavrent’ev Avenue, Novosibirsk, Russia)
,
Predein A.V.
(Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, 13, Acad. Lavrent’ev Avenue, Novosibirsk, Russia)
,
Sabinina I.V.
(Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, 13, Acad. Lavrent’ev Avenue, Novosibirsk, Russia)
,
Sidorov Yu.G.
(Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, 13, Acad. Lavrent’ev Avenue, Novosibirsk, Russia)
,
Stuchinsky V.A.
(Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, 13, Acad. Lavrent’ev Avenue, Novosibirsk, Russia)
資料名:
Infrared Physics & Technology
(Infrared Physics & Technology)
巻:
81
ページ:
223-227
発行年:
2017年
JST資料番号:
H0184A
ISSN:
1350-4495
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)