文献
J-GLOBAL ID:201702217191335716
整理番号:17A1727327
一軸歪ホスホレンn-MOSFETの性能研究【Powered by NICT】
Performance investigation of uniaxially strained phosphorene n-MOSFETs
著者 (4件):
Jung Sungwoo
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Deajeon, Republic of Korea)
,
Seo Junbeom
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Deajeon, Republic of Korea)
,
Heo Seonghyun
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Deajeon, Republic of Korea)
,
Shin Mincheol
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Deajeon, Republic of Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
SISPAD
ページ:
341-344
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)