文献
J-GLOBAL ID:201702217257156160
整理番号:17A0666309
プロセス変動に対する感度を含むスケール3ゲートInGaAs OIn-MOSFETのためのDIBL特性の理論的研究【Powered by NICT】
Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations
著者 (4件):
Wu Shu-Hua
(Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan)
,
Yu Chien-Lin
(Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan)
,
Yu Chang-Hung
(Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan)
,
Su Pin
(Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan)
資料名:
IEEE Journal of the Electron Devices Society
(IEEE Journal of the Electron Devices Society)
巻:
5
号:
1
ページ:
45-52
発行年:
2017年
JST資料番号:
W2429A
ISSN:
2168-6734
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)