文献
J-GLOBAL ID:201702217425149582
整理番号:17A0993073
金属Cd源を用いたCdTeの気相エピタクシーの熱力学的解析【Powered by NICT】
Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source
著者 (4件):
Iso Kenji
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan)
,
Iso Kenji
(R&TD Center, Tsukuba Plant, LED Materials Department, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan)
,
Murakami Hisashi
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan)
,
Koukitu Akinori
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
470
ページ:
122-127
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)