文献
J-GLOBAL ID:201702217439046354
整理番号:17A0851394
種子エンドn型Czochralskiけい素ウエハ中の光照射下のバルク欠陥形成-シリコンヘテロ接合太陽電池に及ぼす影響【Powered by NICT】
Bulk defect formation under light soaking in seed-end n-type Czochralski silicon wafers - Effect on silicon heterojunction solar cells
著者 (8件):
Letty Elenore
(Univ. Grenoble Alpes, INES, F-73375 Le Bourget du Lac, France)
,
Letty Elenore
(CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France)
,
Letty Elenore
(University of Lyon, Lyon Institute of Nanotechnology (INL) UMR CNRS 5270, INSA de Lyon, Villeurbanne, France)
,
Veirman Jordi
(Univ. Grenoble Alpes, INES, F-73375 Le Bourget du Lac, France)
,
Veirman Jordi
(CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France)
,
Favre Wilfried
(Univ. Grenoble Alpes, INES, F-73375 Le Bourget du Lac, France)
,
Favre Wilfried
(CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France)
,
Lemiti Mustapha
(University of Lyon, Lyon Institute of Nanotechnology (INL) UMR CNRS 5270, INSA de Lyon, Villeurbanne, France)
資料名:
Solar Energy Materials and Solar Cells
(Solar Energy Materials and Solar Cells)
巻:
166
ページ:
147-156
発行年:
2017年
JST資料番号:
D0513C
ISSN:
0927-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)