文献
J-GLOBAL ID:201702217527029643
整理番号:17A1181735
湿式リセスと湿式酸化AlGaN/GaN高電子移動度トランジスタの性能改善とより良いスケーラビリティ【Powered by NICT】
Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors
著者 (5件):
Takhar Kuldeep
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India)
,
Meer Mudassar
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India)
,
Upadhyay Bhanu B.
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India)
,
Ganguly Swaroop
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India)
,
Saha Dipankar
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
131
ページ:
39-44
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)