文献
J-GLOBAL ID:201702217561839721
整理番号:17A1650023
MOCVD成長InGaAs薄層を用いたナノ電極THz光混合器【Powered by NICT】
Nanoelectrode THz photomixer using a MOCVD-grown InGaAs thin layer
著者 (9件):
Moon Kiwon
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Lee Eui Su
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Lee Il-Min
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Park Dong Woo
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Kim Hyun Soo
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Park Jeong-Woo
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Han Sang-Pil
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Choi Kyeong Sun
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
,
Park Kyung Hyun
(Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI))
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
IRMMW-THz
ページ:
1-2
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)