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J-GLOBAL ID：201702218313715644
整理番号：17A1170250
電気シナプスのための電子型CuPcベース要素における整流制御されたメムリスティブ特性【Powered by NICT】
Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse
Wang Laiyuan
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Yang Jie
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Zhu Ying
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Yi Mingdong
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Xie Linghai
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Ju Ruolin
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Wang Zhiyong
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Liu Lutao
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Li Tengfei
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Zhang Chenxi
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Chen Yan
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Wu Yanan
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Huang Wei
(Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China)
,
Huang Wei
(Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China)
資料名：
Advanced Electronic Materials
(Advanced Electronic Materials)
巻： 3 号： 7 ページ： ROMBUNNO.201700063 発行年： 2017年
JST資料番号： W2482A ISSN： 2199-160X 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： アメリカ合衆国 (USA) 言語： 英語 (EN)
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