文献
J-GLOBAL ID:201702218449809395
整理番号:17A1501784
Ge-Sn(GeSn)のプラズマ酸化の速度論【Powered by NICT】
Kinetics of plasma oxidation of germanium-tin (GeSn)
著者 (8件):
Wang Wei
(Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore)
,
Lei Dian
(Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore)
,
Dong Yuan
(Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore)
,
Zhang Zheng
(Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, 138634, Singapore)
,
Pan Jisheng
(Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, 138634, Singapore)
,
Gong Xiao
(Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore)
,
Tok Eng-Soon
(Department of Physics, National University of Singapore, 117551, Singapore)
,
Yeo Yee-Chia
(Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
425
ページ:
95-99
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)