文献
J-GLOBAL ID:201702218466041397
整理番号:17A0057906
ふっ素プラズマ処理によるAlGaN/GaNH EMTに対する熱アニーリングの影響【Powered by NICT】
Influence of thermal annealing on AlGaN/GaN HEMT by fluorine plasma treatment
著者 (6件):
He Yunlong
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2, South Taibai Road, Xi’an, Shaanxi Province)
,
Mi Minhan
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2, South Taibai Road, Xi’an, Shaanxi Province)
,
Zhang Meng
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2, South Taibai Road, Xi’an, Shaanxi Province)
,
Wang Chong
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2, South Taibai Road, Xi’an, Shaanxi Province)
,
Ma Xiaohua
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2, South Taibai Road, Xi’an, Shaanxi Province)
,
Hao Yue
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2, South Taibai Road, Xi’an, Shaanxi Province)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
116-119
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)