文献
J-GLOBAL ID:201702218924603395
整理番号:17A1121864
高感度・チタン合金と可とう性静電容量型圧力センサと1V動作感圧トランジスタへの応用【Powered by NICT】
Highly Sensitive and Bendable Capacitive Pressure Sensor and Its Application to 1 V Operation Pressure-Sensitive Transistor
著者 (8件):
Joo Yunsik
(Department of Electrical and Computer Engineering, Inter University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 151-742, Republic of Korea)
,
Yoon Jaeyoung
(Department of Electrical and Computer Engineering, Inter University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 151-742, Republic of Korea)
,
Ha Jewook
(Department of Electrical and Computer Engineering, Inter University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 151-742, Republic of Korea)
,
Kim Taehoon
(Department of Electrical and Computer Engineering, Inter University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 151-742, Republic of Korea)
,
Lee Seunghwan
(Department of Electrical and Computer Engineering, Inter University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 151-742, Republic of Korea)
,
Lee Byeongmoon
(Department of Electrical and Computer Engineering, Inter University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 151-742, Republic of Korea)
,
Pang Changhyun
(School of Chemical Engineering, SKKU Advanced Institute of Nanotechnology (SAINT), Samsung Advanced Institute for Health Science and Technology (SAIHST), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 440-746, Republic of Korea)
,
Hong Yongtaek
(Department of Electrical and Computer Engineering, Inter University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 151-742, Republic of Korea)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
3
号:
4
ページ:
null
発行年:
2017年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)