文献
J-GLOBAL ID:201702219766980750
整理番号:17A0826115
650V p-GaNゲートH EMTの性能の最大化:動的RON特性と回路の設計考察【Powered by NICT】
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
著者 (6件):
Wang Hanxing
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong)
,
Wei Jin
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong)
,
Xie Ruiliang
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong)
,
Liu Cheng
(San’an Integrated Circuit Co., Ltd., Xiamen, China)
,
Tang Gaofei
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong)
,
Chen Kevin J.
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong)
資料名:
IEEE Transactions on Power Electronics
(IEEE Transactions on Power Electronics)
巻:
32
号:
7
ページ:
5539-5549
発行年:
2017年
JST資料番号:
D0211B
ISSN:
0885-8993
CODEN:
ITPEE8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)