文献
J-GLOBAL ID:201702219987586509
整理番号:17A0446009
押込法に基づくSiCセラミック基板上の酸化膜の特性化【Powered by NICT】
Characterization of oxidation film on SiC ceramic substrate based on indentation method
著者 (6件):
Qu Zhaoliang
(College of Engineering, Peking University, Beijing 100871, P. R. China)
,
Zhang Qiang
(College of Engineering, Peking University, Beijing 100871, P. R. China)
,
He Rujie
(Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 100081, P. R. China)
,
Pei Yongmao
(College of Engineering, Peking University, Beijing 100871, P. R. China)
,
Fang Daining
(College of Engineering, Peking University, Beijing 100871, P. R. China)
,
Fang Daining
(Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 100081, P. R. China)
資料名:
Ceramics International
(Ceramics International)
巻:
43
号:
5
ページ:
4399-4404
発行年:
2017年
JST資料番号:
H0705A
ISSN:
0272-8842
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)