文献
J-GLOBAL ID:201702220258179559
整理番号:17A1430111
株による1T ZrS_2単分子層の電子構造【Powered by NICT】
Electronic structure in 1T-ZrS2 monolayer by strain
著者 (6件):
Xin Qianqian
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Zhao Xu
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Ma Xu
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Wu Ninghua
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Liu Xiaomeng
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Wei Shuyi
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
資料名:
Physica E: Low-Dimensional Systems and Nanostructures
(Physica E: Low-Dimensional Systems and Nanostructures)
巻:
93
ページ:
87-91
発行年:
2017年
JST資料番号:
W1066A
ISSN:
1386-9477
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)