文献
J-GLOBAL ID:201702220263459862
整理番号:17A0151794
高電圧入出力型フィン電界効果トランジスタ素子用の窒化した及び焼なました原子層堆積SiO2/高k/金属ゲートに及ぼす酸素プラズマの影響
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
著者 (9件):
Siddiqui Shahab
(GLOBALFOUNDRIES, Malta, New York 12020 and Department of Electrical and Computer Engineering, University of Arizona, Tucson, Arizona 85721)
,
Dai Min
(GLOBALFOUNDRIES, Malta, New York 12020)
,
Loesing Rainer
(GLOBALFOUNDRIES, Malta, New York 12020)
,
Kaltalioglu Erdem
(GLOBALFOUNDRIES, Malta, New York 12020)
,
Pandey Rajan
(GLOBALFOUNDRIES, Malta, New York 12020)
,
Sathiyanarayanan Rajesh
(IBM Semiconductor Research and Development Center, Bangalore 560045, India)
,
De Sandip
(Laboratory of Computational Science and Modeling, EPFL STI IMX COSMO, MXG 319 (Batiment MXG), Station 12, 1015 Lausanne, Switzerland)
,
Raghavan Srini
(Department of Materials Science Engineering, University of Arizona, Tucson, Arizona 85721)
,
Parks Harold
(Department of Electrical and Computer Engineering, Tucson, Arizona 85721)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
1
ページ:
012202-012202-7
発行年:
2017年01月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)