文献
J-GLOBAL ID:201702220499420242
整理番号:17A0697164
GaAs_1-x Sb-xエピ層のLPE成長と光学特性【Powered by NICT】
LPE growth and optical characteristics of GaAs1- x Sb x epilayer
著者 (7件):
Wang Yang
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, PR China)
,
Hu Shuhong
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, PR China)
,
Zhou Wei
(Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, PR China)
,
Sun Yan
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, PR China)
,
Zhang Bin
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, PR China)
,
Wang Chao
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, PR China)
,
Dai Ning
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, PR China)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
463
ページ:
123-127
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)