文献
J-GLOBAL ID:201702220751442679
整理番号:17A0551944
酸化インジウムスズで埋め込んだ薄いp型層と局在Ag粒子を持つプラズモン発光ダイオード製作と評価
Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO
著者 (7件):
Okada N.
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan)
,
Morishita N.
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan)
,
Mori A.
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan)
,
Tsukada T.
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan)
,
Tateishi K.
(Institute for Materials Chemistry and Engineering, Kyushu University, Nishi-ku, Fukuoka-city 819-0395, Japan)
,
Okamoto K.
(Institute for Materials Chemistry and Engineering, Kyushu University, Nishi-ku, Fukuoka-city 819-0395, Japan)
,
Tadatomo K.
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
121
号:
15
ページ:
153102-153102-7
発行年:
2017年04月21日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)