文献
J-GLOBAL ID:201702221051444796
整理番号:17A0057908
MOCVDによりサファイア基板上に成長させたAlN膜の性質に及ぼすAlNバッファ層の効果【Powered by NICT】
Effect of AlN buffer on the properties of AlN films grown on sapphire substrate by MOCVD
著者 (7件):
Chen Xiang
(Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China)
,
Zhang Yun
(Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China)
,
Yan Jianchang
(Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China)
,
Guo Yanan
(Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China)
,
Zhang Shuo
(Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China)
,
Wang Junxi
(Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China)
,
Li Jinmin
(Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
123-126
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)