文献
J-GLOBAL ID:201702221597376640
整理番号:17A1020086
3次元ドット構造を用いた自己集合Geへのセリウムイオンドーピング【Powered by NICT】
Cerium ion doping into self-assembled Ge using three-dimensional dot structure
著者 (5件):
Miyata Yusuke
(Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
,
Ueno Kazuya
(Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
,
Yoshimura Takashi
(Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
,
Ashida Atsushi
(Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
,
Fujimura Norifumi
(Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
468
ページ:
696-700
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)