文献
J-GLOBAL ID:201702221872631557
整理番号:17A1488466
低温を含む広い温度範囲を持つ改良された金属酸化物半導体電界効果トランジスタモデル【Powered by NICT】
Improved Metal Oxide Semiconductor Field Effect Transistor models with wide temperature range including cryogenic temperature
著者 (4件):
Liu Siyang
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210094, China)
,
Li Xiujun
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210094, China)
,
Liu Chao
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210094, China)
,
Sun Weifeng
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210094, China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
109
ページ:
31-40
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)