文献
J-GLOBAL ID:201702222900275664
整理番号:17A0794818
バックチャネルエッチした酸化物薄膜トランジスタ回路集積のためのMoNi合金と多層構造を用いたCuベース電極の腐食挙動と金属化【Powered by NICT】
Corrosion Behavior and Metallization of Cu-Based Electrodes Using MoNi Alloy and Multilayer Structure for Back-Channel-Etched Oxide Thin-Film Transistor Circuit Integration
著者 (5件):
Kim Da Eun
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, South Korea)
,
Cho Sung Woon
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, South Korea)
,
Kim Sung Chan
(SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, South Korea)
,
Kang Won Jun
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, South Korea)
,
Cho Hyung Koun
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, South Korea)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
2
ページ:
447-454
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)