文献
J-GLOBAL ID:201702222994954727
整理番号:17A1459395
散乱層としてZrO_2高アスペクト比パターンを用いたGaNベース発光ダイオードの光抽出効率の増強【Powered by NICT】
Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer
著者 (7件):
Choo Soyoung
(Dept. of Materials Science and Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea)
,
Choi Jinyoung
(Dept. of Materials Science and Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea)
,
Choi Hak-Jong
(Dept. of Materials Science and Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea)
,
Huh Daihong
(Dept. of Materials Science and Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea)
,
Son Soomin
(Dept. of Materials Science and Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea)
,
Kim Yang Doo
(Dept. of Materials Science and Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea)
,
Lee Heon
(Dept. of Materials Science and Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea)
資料名:
Ceramics International
(Ceramics International)
巻:
43
号:
S1
ページ:
S609-S612
発行年:
2017年
JST資料番号:
H0705A
ISSN:
0272-8842
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)