文献
J-GLOBAL ID:201702223081929615
整理番号:17A1641109
が良い1S1Rクロスバーアレイ用途のためのしきい値選択を用いた自己制限CBRAM【Powered by NICT】
Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications
著者 (5件):
Song Jeonghwan
(Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Woo Jiyong
(Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Lim Seokjae
(Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Chekol Solomon Amsalu
(Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Hwang Hyunsang
(Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
11
ページ:
1532-1535
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)