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J-GLOBAL ID：201702223328342423
整理番号：17A0164336
室温で成長させたAZO/AL_2O_3積層薄膜トランジスタの性能を研究した。【JST・京大機械翻訳】
Properties of AZO/Al_2O_3 Stacked Thin Film Transistors Prepared at Room Temperature
Ning Honglong
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Zeng Yong
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Yao Rihui
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Liu Xianzhe
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Tao Ruiqiang
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Zheng Zeke
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Fang Zhiqiang
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Hu Shiben
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Chen Jianqiu
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Cai Wei
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Xu Miao
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Lan Linfeng
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Wang Lei
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Peng Junbiao
(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School,South China University of Technology)
,
Li Zhengcao
(State Key Laboratory of New Ceramic and Fine Processing,Department of Materials Science and Engineering School,Tsinghua University)
資料名：
Faguang Xuebao
(Faguang Xuebao)
巻： 37 号： 11 ページ： 1372-1377 発行年： 2016年
JST資料番号： W1380A ISSN： 1000-7032 CODEN： FAXUEW 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： 中国 (CHN) 言語： 中国語 (ZH)
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