文献
J-GLOBAL ID:201702223477418954
整理番号:17A1725079
CWDMに応用するためのOバンド窒化けい素AWGの設計と統合【Powered by NICT】
Design and integration of an O-band silicon nitride AWG for CWDM applications
著者 (10件):
Guerber Sylvain
(TR&D - STMicroelectronics SAS - 850 rue Jean Monnet - 38920 CROLLES France)
,
Alonso-Ramos Carlos
(Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris-Sud, Universite ́ Paris-Saclay, C2N - Orsay, 91405 Orsay Cedex, France)
,
Perez-Galacho Diego
(Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris-Sud, Universite ́ Paris-Saclay, C2N - Orsay, 91405 Orsay Cedex, France)
,
Le Roux Xavier
(Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris-Sud, Universite ́ Paris-Saclay, C2N - Orsay, 91405 Orsay Cedex, France)
,
Vulliet Nathalie
(TR&D - STMicroelectronics SAS - 850 rue Jean Monnet - 38920 CROLLES France)
,
Cremer Sebastien
(TR&D - STMicroelectronics SAS - 850 rue Jean Monnet - 38920 CROLLES France)
,
Marris-Morini Delphine
(TR&D - STMicroelectronics SAS - 850 rue Jean Monnet - 38920 CROLLES France)
,
Boeuf Frederic
(TR&D - STMicroelectronics SAS - 850 rue Jean Monnet - 38920 CROLLES France)
,
Vivien Laurent
(Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris-Sud, Universite ́ Paris-Saclay, C2N - Orsay, 91405 Orsay Cedex, France)
,
Baudot Charles
(TR&D - STMicroelectronics SAS - 850 rue Jean Monnet - 38920 CROLLES France)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
GFP
ページ:
133-134
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)