文献
J-GLOBAL ID:201702223912375603
整理番号:17A0883496
強磁性特性を有するC_3N2D結晶性ホールフリー,調整可能な狭いバンドギャップ半導体【Powered by NICT】
C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties
著者 (18件):
Yang Siwei
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Li Wei
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Li Wei
(Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, China)
,
Ye Caichao
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Wang Gang
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Tian He
(Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China)
,
Zhu Chong
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
He Peng
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Ding Guqiao
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Xie Xiaoming
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Xie Xiaoming
(School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031, P. R. China)
,
Liu Yang
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
,
Lifshitz Yeshayahu
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
,
Lifshitz Yeshayahu
(Department of Materials Science and Engineering, Technion, Israel Institute of Technology, Haifa, 3200003, Israel)
,
Lee Shuit-Tong
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
,
Kang Zhenhui
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
,
Jiang Mianheng
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
,
Jiang Mianheng
(School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031, P. R. China)
資料名:
Advanced Materials
(Advanced Materials)
巻:
29
号:
16
ページ:
ROMBUNNO.201605625
発行年:
2017年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)