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J-GLOBAL ID:201702223912375603   整理番号:17A0883496

強磁性特性を有するC_3N2D結晶性ホールフリー,調整可能な狭いバンドギャップ半導体【Powered by NICT】

C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties
著者 (18件):
Yang Siwei
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Li Wei
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Li Wei
(Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, China)
Ye Caichao
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Wang Gang
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Tian He
(Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China)
Zhu Chong
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
He Peng
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Ding Guqiao
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Xie Xiaoming
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Xie Xiaoming
(School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031, P. R. China)
Liu Yang
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
Lifshitz Yeshayahu
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
Lifshitz Yeshayahu
(Department of Materials Science and Engineering, Technion, Israel Institute of Technology, Haifa, 3200003, Israel)
Lee Shuit-Tong
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
Kang Zhenhui
(Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China)
Jiang Mianheng
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China)
Jiang Mianheng
(School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031, P. R. China)

資料名:
Advanced Materials  (Advanced Materials)

巻: 29  号: 16  ページ: ROMBUNNO.201605625  発行年: 2017年 
JST資料番号: W0001A  ISSN: 0935-9648  CODEN: ADVMEW  資料種別: 逐次刊行物 (A)
記事区分: 原著論文  発行国: ドイツ (DEU)  言語: 英語 (EN)
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