文献
J-GLOBAL ID:201702223983708156
整理番号:17A1181757
Si基板上のイオン注入分離したAlGaN/GaN MIS高電子移動度トランジスタの漏れの機構【Powered by NICT】
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate
著者 (23件):
Zhang Zhili
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Zhang Zhili
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
,
Song Liang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Song Liang
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
,
Li Weiyi
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Li Weiyi
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
,
Fu Kai
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Yu Guohao
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Zhang Xiaodong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Fan Yaming
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Deng Xuguang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Li Shuiming
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Sun Shichuang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Sun Shichuang
(Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China)
,
Li Xiajun
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Li Xiajun
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
,
Yuan Jie
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Yuan Jie
(Nanjing University of Science and Technology, School of Materials Science and Engineering, Nanjing 210094, Jiangsu, China)
,
Sun Qian
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Dong Zhihua
(School of Electronics & Information, Hangzhou Dianzi University, 310018, China)
,
Cai Yong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Zhang Baoshun
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
,
Zhang Baoshun
(Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
134
ページ:
39-45
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)