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J-GLOBAL ID:201702223983708156   整理番号:17A1181757

Si基板上のイオン注入分離したAlGaN/GaN MIS高電子移動度トランジスタの漏れの機構【Powered by NICT】

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate
著者 (23件):
Zhang Zhili
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Zhang Zhili
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
Song Liang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Song Liang
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
Li Weiyi
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Li Weiyi
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
Fu Kai
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Yu Guohao
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Zhang Xiaodong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Fan Yaming
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Deng Xuguang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Li Shuiming
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Sun Shichuang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Sun Shichuang
(Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China)
Li Xiajun
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Li Xiajun
(University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, China)
Yuan Jie
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Yuan Jie
(Nanjing University of Science and Technology, School of Materials Science and Engineering, Nanjing 210094, Jiangsu, China)
Sun Qian
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Dong Zhihua
(School of Electronics & Information, Hangzhou Dianzi University, 310018, China)
Cai Yong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Zhang Baoshun
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China)
Zhang Baoshun
(Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China)

資料名:
Solid-State Electronics  (Solid-State Electronics)

巻: 134  ページ: 39-45  発行年: 2017年 
JST資料番号: H0225A  ISSN: 0038-1101  資料種別: 逐次刊行物 (A)
記事区分: 原著論文  発行国: イギリス (GBR)  言語: 英語 (EN)
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