文献
J-GLOBAL ID:201702224372957668
整理番号:17A0471527
酸化けい素膜の形成のためのヘキサメチルジシロキサンから生じたフラグメントの低エネルギー質量選択イオンビームの生成【Powered by NICT】
Low-energy mass-selected ion beam production of fragments produced from hexamethyldisiloxane for the formation of silicon oxide film
著者 (5件):
Yoshimura Satoru
(Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Sugimoto Satoshi
(Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Murai Kensuke
(National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan)
,
Kiuchi Masato
(Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Kiuchi Masato
(National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan)
資料名:
Surface & Coatings Technology
(Surface & Coatings Technology)
巻:
313
ページ:
402-406
発行年:
2017年
JST資料番号:
D0205C
ISSN:
0257-8972
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)