文献
J-GLOBAL ID:201702224862316762
整理番号:17A0474625
Ge-Sb-Se薄膜における光誘起構造変化【Powered by NICT】
Photo-induced structural changes in Ge-Sb-Se films
著者 (12件):
Lin Li
(Laboratory of Infrared Material and Devices, Ningbo University, Ningbo, Zhejiang 315211, China)
,
Lin Li
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China)
,
Wang Guoxiang
(Laboratory of Infrared Material and Devices, Ningbo University, Ningbo, Zhejiang 315211, China)
,
Wang Guoxiang
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China)
,
Shen Xiang
(Laboratory of Infrared Material and Devices, Ningbo University, Ningbo, Zhejiang 315211, China)
,
Shen Xiang
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China)
,
Dai Shixun
(Laboratory of Infrared Material and Devices, Ningbo University, Ningbo, Zhejiang 315211, China)
,
Dai Shixun
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China)
,
Xu Tiefeng
(Laboratory of Infrared Material and Devices, Ningbo University, Ningbo, Zhejiang 315211, China)
,
Xu Tiefeng
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China)
,
Nie Qiuhua
(Laboratory of Infrared Material and Devices, Ningbo University, Ningbo, Zhejiang 315211, China)
,
Nie Qiuhua
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China)
資料名:
Infrared Physics & Technology
(Infrared Physics & Technology)
巻:
81
ページ:
59-63
発行年:
2017年
JST資料番号:
H0184A
ISSN:
1350-4495
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)