文献
J-GLOBAL ID:201702225173478141
整理番号:17A0449587
セレン化/硫化処理に続く単一四元Cu_2ZnSnS_4ターゲットを用いたスパッタリング蒸着により作製したCu_2ZnSn(S_xSe_1-)-4薄膜太陽電池の特性【Powered by NICT】
Characteristics of Cu2ZnSn(SxSe1- )4 thin-film solar cells prepared by sputtering deposition using single quaternary Cu2ZnSnS4 target followed by selenization/sulfurization treatment
著者 (4件):
Lin Yu-Pin
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan 30010, Republic of China)
,
Hsieh Tsung-Eong
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan 30010, Republic of China)
,
Chen Yen-Chih
(Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 30011, Republic of China)
,
Huang Kun-Ping
(Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, Republic of China)
資料名:
Solar Energy Materials and Solar Cells
(Solar Energy Materials and Solar Cells)
巻:
162
ページ:
55-61
発行年:
2017年
JST資料番号:
D0513C
ISSN:
0927-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)