文献
J-GLOBAL ID:201702225321342612
整理番号:17A1611030
高電力SHFトランジスタのためのAlGaAs/InGaAs/AlGaAsヘテロ構造の特性への付加的p+ドープ層の影響
Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors
著者 (11件):
GULYAEV D V
(Rzhanov Inst. of Semiconductor Physics, Russian Acad. of Sci., Novosibirsk, RUS)
,
ZHURAVLEV K S
(Rzhanov Inst. of Semiconductor Physics, Russian Acad. of Sci., Novosibirsk, RUS)
,
ZHURAVLEV K S
(Novosibirsk State Univ., Novosibirsk, RUS)
,
BAKAROV A K
(Rzhanov Inst. of Semiconductor Physics, Russian Acad. of Sci., Novosibirsk, RUS)
,
BAKAROV A K
(Novosibirsk State Univ., Novosibirsk, RUS)
,
TOROPOV A I
(Rzhanov Inst. of Semiconductor Physics, Russian Acad. of Sci., Novosibirsk, RUS)
,
PROTASOV D Yu
(Rzhanov Inst. of Semiconductor Physics, Russian Acad. of Sci., Novosibirsk, RUS)
,
PROTASOV D Yu
(Novosibirsk State Technical Univ., Novosibirsk, RUS)
,
GUTAKOVSKII A K
(Rzhanov Inst. of Semiconductor Physics, Russian Acad. of Sci., Novosibirsk, RUS)
,
BER B Ya
(Ioffe Physico-Technical Inst., Russian Acad. of Sci., Saint Petersburg, RUS)
,
KAZANTSEV D Yu
(Ioffe Physico-Technical Inst., Russian Acad. of Sci., Saint Petersburg, RUS)
資料名:
Journal of Physics. D. Applied Physics
(Journal of Physics. D. Applied Physics)
巻:
49
号:
9
ページ:
095108,1-9
発行年:
2016年03月09日
JST資料番号:
B0092B
ISSN:
0022-3727
CODEN:
JPAPBE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)