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J-GLOBAL ID:201702225356859928
整理番号:17A0795072
低温における二重層ゲート誘電体を有する高性能Tiをドープした亜鉛酸化物TFT【Powered by NICT】
High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature
著者 (8件):
Cui Guodong
(Institute of Microelectronics, Peking University, Beijing, China)
,
Han Dedong
(Institute of Microelectronics, Peking University, Beijing, China)
,
Cong Yingying
(Institute of Microelectronics, Peking University, Beijing, China)
,
Dong Junchen
(Institute of Microelectronics, Peking University, Beijing, China)
,
Yu Wen
(Institute of Microelectronics, Peking University, Beijing, China)
,
Zhang Shengdong
(Institute of Microelectronics, Peking University, Beijing, China)
,
Zhang Xing
(Institute of Microelectronics, Peking University, Beijing, China)
,
Wang Yi
(Institute of Microelectronics, Peking University, Beijing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
2
ページ:
207-209
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)