文献
J-GLOBAL ID:201702225425892448
整理番号:17A1907010
電子ビームリソグラフィにおける限界寸法への確率論的露光の影響
Effects of stochastic exposure on critical dimension in electron-beam lithography
著者 (6件):
Ji Hyesung
(Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849)
,
Lee Soo-Young
(Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849)
,
Choi Jin
(Samsung Electronics, Mask Development Team, 16 Banwol-Dong, Hwasung, Kyunggi-Do 445-701, South Korea)
,
Kim Seom-Beom
(Samsung Electronics, Mask Development Team, 16 Banwol-Dong, Hwasung, Kyunggi-Do 445-701, South Korea)
,
Shin In-Kyun
(Samsung Electronics, Mask Development Team, 16 Banwol-Dong, Hwasung, Kyunggi-Do 445-701, South Korea)
,
Jeon Chan-Uk
(Samsung Electronics, Mask Development Team, 16 Banwol-Dong, Hwasung, Kyunggi-Do 445-701, South Korea)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
6
ページ:
06G503-06G503-10
発行年:
2017年11月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)