文献
J-GLOBAL ID:201702225738096958
整理番号:17A1550654
電子ビーム蒸着によるSi基板上に成長させたFeドープZnO薄膜ナノワイヤの光学的性質と形態に及ぼすシード層(Al, Ti)の影響【Powered by NICT】
Effect of seed layers (Al, Ti) on optical and morphology of Fe-doped ZnO thin film nanowires grown on Si substrate via electron beam evaporation
著者 (8件):
Reddy I. Neelakanta
(School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749, South Korea)
,
Reddy Ch.Venkata
(School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749, South Korea)
,
Sreedhar M.
(Centre for Nanoscience and Nanotechnology, Sathyabama University, Chennai 600-119, India)
,
Cho Migyung
(School of Information Engineering, Tongmyong University, Busan 608-711, Republic of Korea)
,
Shim Jaesool
(School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749, South Korea)
,
Reddy V. Rajagopal
(Department of Physics, Sri Venkateswara University, Tirupati 517-502, India)
,
Choi Chel-Jong
(School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea)
,
Kim Dongseob
(Avionics Components & System Technology Center, Yeongcheon-si, Gyeongsangbuk-do 38822, Republic of Korea)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
71
ページ:
296-303
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)