文献
J-GLOBAL ID:201702226349734066
整理番号:17A0539993
気相MBEで成長させたInGaAs/GaAsBi/InGaAsII型量子井戸の光ルミネセンス
Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
著者 (16件):
PAN Wenwu
(Shanghai Inst. of Microsystem and Information Technol., CAS, Shanghai, CHN)
,
PAN Wenwu
(Univ. Chinese Acad. of Sci., Beijing, CHN)
,
ZHANG Liyao
(Shanghai Inst. of Microsystem and Information Technol., CAS, Shanghai, CHN)
,
ZHU Liang
(Univ. Chinese Acad. of Sci., Beijing, CHN)
,
ZHU Liang
(National Lab. for Infrared Physics, Chinese Acad. of Sci., Shanghai, CHN)
,
SONG Yuxin
(Shanghai Inst. of Microsystem and Information Technol., CAS, Shanghai, CHN)
,
LI Yaoyao
(Shanghai Inst. of Microsystem and Information Technol., CAS, Shanghai, CHN)
,
WANG Chang
(ShanghaiTech Univ., Shanghai, CHN)
,
WANG Peng
(Shanghai Inst. of Microsystem and Information Technol., CAS, Shanghai, CHN)
,
WANG Peng
(Univ. Chinese Acad. of Sci., Beijing, CHN)
,
WU Xiaoyan
(Shanghai Inst. of Microsystem and Information Technol., CAS, Shanghai, CHN)
,
WU Xiaoyan
(Univ. Chinese Acad. of Sci., Beijing, CHN)
,
ZHANG Fan
(ShanghaiTech Univ., Shanghai, CHN)
,
SHAO Jun
(National Lab. for Infrared Physics, Chinese Acad. of Sci., Shanghai, CHN)
,
WANG Shumin
(Shanghai Inst. of Microsystem and Information Technol., CAS, Shanghai, CHN)
,
WANG Shumin
(Chalmers Univ. Technol., Gothenburg, SWE)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
32
号:
1
ページ:
015007,1-6
発行年:
2017年01月
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)