文献
J-GLOBAL ID:201702226465592491
整理番号:17A0352473
シリコンウエハの表面不動態化に及ぼすPECVD SiN_x/SiO_yN_x Si界面特性の影響【Powered by NICT】
Effect of PECVD SiN_x/SiO_yN_x-Si interface property on surface passivation of silicon wafer
著者 (5件):
Jia Xiaojie
(Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences)
,
Zhou Chunlan
(Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences)
,
Zhu Junjie
(Solar Energy Department, Institute for Energy Technology)
,
Zhou Su
(Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences)
,
Wang Wenjing
(Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
12
ページ:
127301-1-127301-5
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)