文献
J-GLOBAL ID:201702226566521483
整理番号:17A1181726
GeO_2/Ge界面での酸素空格子点形成による有効仕事関数の低減【Powered by NICT】
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface
著者 (7件):
Lee Tae In
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, South Korea)
,
Seo Yujin
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, South Korea)
,
Moon Jungmin
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, South Korea)
,
Ahn Hyun Jun
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, South Korea)
,
Yu Hyun-Young
(School of Electrical Engineering, Korea University, Anam-Dong, Seongbuk-Gu, Seoul 136-713, South Korea)
,
Hwang Wan Sik
(Department of Materials Engineering, Korea Aerospace University, Goyang 412-791, South Korea)
,
Cho Byung Jin
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, South Korea)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
130
ページ:
57-62
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)