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J-GLOBAL ID:201702227526060617
整理番号:17A1641120
GaN FETにおけるゲート誘電体としてAlSiOの最初の実証:高性能OG FETへの応用【Powered by NICT】
First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET
著者 (6件):
Gupta Chirag
(Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA)
,
Chan Silvia H.
(Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA)
,
Agarwal Anchal
(Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA)
,
Hatui Nirupam
(Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA)
,
Keller Stacia
(Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA)
,
Mishra Umesh K.
(Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
11
ページ:
1575-1578
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)