文献
J-GLOBAL ID:201702227620324743
整理番号:17A0323184
ホウ素およびガリウムを同時ドープしたZnO膜の特性に及ぼすRF電力と基板温度の影響【Powered by NICT】
Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films
著者 (8件):
Yang Jin
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
,
Huang Jian
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
,
Ji Huanhuan
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
,
Tang Ke
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
,
Zhang Lei
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
,
Ren Bing
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
,
Cao Meng
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
,
Wang Linjun
(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
53
ページ:
84-88
発行年:
2016年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)